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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guina, Mircea
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (36/36 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfacescitations
- 2023Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019V-groove etched 1-eV-GaInNAs nipi solar cellcitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2019Gradients of Be-dopant concentration in self-catalyzed GaAs nanowirescitations
- 2019Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporationcitations
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wellscitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2017Photo-acoustic Spectroscopy of Resonant Absorption in III-V Semiconductor Nanowires
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2016Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wellscitations
- 2015Defects in dilute nitride solar cells
- 2015Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayerscitations
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2015Detecting lateral composition modulation in dilute Ga(As,Bi) epilayerscitations
- 2015Te-doping of self-catalyzed GaAs nanowirescitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2014Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-Ocitations
- 2012Dilute nitride and GaAs n-i-p-i solar cellscitations
- 2011Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk laserscitations
- 2011Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates:A catalyst for removal of amorphous surface oxidescitations
- 2008Passively Q-switched Tm3+, Ho3+-doped silica fiber laser using a highly nonlinear saturable absorber and dynamic gain pulse compressioncitations
Places of action
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document
Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
Abstract
Multijunction III-V solar cells have the highest conversion efficiencies among all photovoltaic devices with current world record of 46 %, measured under concentrated light [1]. Furthermore, III-V semiconductor solar cells are found to be the best choice for generating electricity for satellites, because of high power-to-mass ratio and good radiation hardness. Although so far, the record conversion efficiency has increased almost one percentage point per year, new materials and concepts are needed to overcome the 50 % conversion efficiency barrier. <br/><br/>To this end, one of the most promising III-V photovoltaic material families is dilute nitrides. Introducing nitrogen to GaInAs shrinks the band gap by influencing the conduction band, and forming a localized band inside the material [2]. Nitrogen also compensates the compressive strain caused by In, when material is grown on GaAs or Ge substrates, preventing the formation of harmful dislocations. Capability to achieve a band gap between 1.4-0.8 eV and still maintain lattice matching [3], makes GaInNAs a good candidate as a part of multijunction solar cell with conversion efficiency exceeding 50 %.<br/><br/>In this presentation we discuss the use of optimized [4] bulk GaInNAs hetero-structures in multijunction solar cell (Figure 1.). Moreover, we have used GaInNAs and GaNAs for strain compensation and mediation, to absorb photons, and to boost the thermal escape of charge carriers in InAs quantum dot solar cell [5]. The properties of the dilute nitride based solar cells developed will be discussed.<br/><br/> <br/><br/>Figure 1: A photograph of multijunction solar cell for concentrator applications, designed, fabricated and processed by the authors at Optoelectronics Research Centre, Tampere University of Technology.<br/><br/>References<br/>[1] M. A. Green, K. Emery, Y. Hishikawa, W. Warta and E. D. Dunlop, Prog. Photovoltaics Res. Appl. 23, 805 (2015).<br/>[2] M. Henini (Ed.), Dilute Nitride Semiconductors(Elsevier, Amsterdam, 2005).<br/>[3] J. S. Harris, R. Kudrawiec, H. Yuen, S. Bank, H. Bae, M. Wistey, D. Jackrel, E. Pickett, T. Sarmiento and L. Goddard, Phys. Status Solidi B 244,2707 (2007).<br/>[4] A. Aho, V. Polojärvi, V.-M. Korpijärvi, J. Salmi, A. Tukiainen, P. Laukkanen and M. Guina, Solar Energy Mater. Solar Cells 124, 150 (2014).<br/>[5] V. Polojärvi, E.-M. Pavelescu, A. Schramm, A. Tukiainen, A. Aho, J. Puustinen and M. Guina, Scr. Mater. 108, 122 (2015).<br/>