| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Isoaho, Riku
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2019Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporationcitations
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
Places of action
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document
Combined MBE-MOCVD process for high-efficiency multijunction solar cells
Abstract
We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.