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Calmon, Pierre-François
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Publications (6/6 displayed)
- 2024Optical Feedback FM-to-AM Conversion with integrated Micro-Ring Resonator for Displacement Sensing Applicationscitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Buried Waveguides using a Quasi-Planar Process
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
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document
Buried Waveguides using a Quasi-Planar Process
Abstract
The oxidation of Al-containing III-V semiconductors is an established technology to selectively transform a high-index (2.9) semiconductor layer into an insulating low-index (n~1.6) aluminium oxide (AlOx) and which, thereby, allows the fabrication of buried oxide apertures in either vertical-cavity surface-emitting lasers or waveguide-based devices [1-4]. Because of the chemical selectivity of the process, the oxidation is conventionally carried out as a lateral oxidation from the sides of etched mesas (see Fig. 1 left), resulting in a loss of wafer planarity which, in turns, renders the subsequent fabrication stages of waveguide devices more complex. In this paper, we report the first demonstration of an alternative technique to make buried optical waveguides where the oxidation is carried out through via-holes (see Fig. 1 right) leading to a quasi-planar approach.