| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Almuneau, Guilhem
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2025Near-infrared transparent conductive electrodes based on composite GaAs-metal deep sub-wavelength high contrast grating
- 2023Oxidation of III-V semiconductors and applications ; Oxydation des semiconducteurs III-V et applications
- 2023Two birds with one tool: using thermocompression for both metallic contact annealing and wafer bonding of GaAs solar cells ; Faire d'une pierre deux coups : utilisation de la thermocompression pour le recuit des contacts métalliques et le collage de cellules solaires en GaAs
- 2019Controlled Oxidation of III-V Semiconductors for Photonic Devices
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2018Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameterscitations
- 2018Modelling anisotropic lateral oxidation from circular mesascitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Coupled mode analysis of micro-disk resonators with an asymmetric- index-profile coupling region
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
- 2017Buried Waveguides using a Quasi-Planar Process
- 2017Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
- 2014Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structurecitations
- 2008Real-time in-situ monitoring of wet thermal oxidation for precise confinement in VCSELscitations
Places of action
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document
Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
Abstract
Aim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-Junction Solar Cells (MJSCs), in which they ensure the series interconnection between the subcells. For GaAs based MJSCs, very low resistive (with peak tunneling current density J peak up to 10 kA/cm²) AlGaAs:C/GaInP:Te or AlGaAs:C/GaAs:Te have been recently developed by MOVPE using Te instead of Si as N-dopant making it possible to get the heavily doping levels needed for tunneling optimization [1]. In this work, we investigate an alternative to this approach. The tunneling probability is increased through the engineering of band-offset thanks to the use of a type II (Al)GaAsSb/(Al)InGaAs staggered heterojunction. Such TJs are suitable for both lattice-matched and metamorphic MJSCs. Scientific innovation and relevance – MBE was used to grow pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs TJs (5% to 10 % In and Sb contents) on GaAs substrate, where Aluminium enables to limit light absorption in the TJ. We have experimentally and theoretically investigated the role of the layer thicknesses on the tunneling mechanisms to propose TJ heterostructure designs suitable for lattice-matched MJSCs and metamorphic MJSCs. Preliminary results and conclusions-For relatively thin [10 to 30 nm] type II TJs, the incorporation of Sb/In in the GaAs TJ is actually degrading the electrical performances, with J peak decreasing from 180 A/cm² for simple GaAs TJ to 70 A/cm² for GaAs 0.95 Sb 0.05 /In 0.05 Ga 0.95 As TJs. On the other hand, thicker 100 nm (Al)GaASb/(Al)InGaAs TJs present the expected tunneling current density increase with J peak close to 1000 A/cm². It worths to note that such thick TJs lead to strain/relaxation issues that could be detrimental for lattice-matched MJSCs but beneficial for metamorphic MJSCs. The origin of this difference in behavior is under investigation both using a semi-classical model [2] and a Non Equilibrium Green's Function based quantum model [3]. First simulations suggest that it originates from a balance between quantum confinement and type II-related tunneling probability enhancement. Based on these results, we are developing GaAs/InGaAs/GaAsSb/GaAs TJs suitable for lattice-matched MJSCs with preliminary measurements showing a thousand-fold increase of the peak tunneling current. Complementary, we are studying the relaxation mechanisms of (Al)Ga(In)As(Sb) alloys using in-situ MBE stress measurements in order to optimize the growth of metamorphic (Al)GaAsSb/(Al)InGaAs TJs.