| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Carta, Daniela
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024A sol-gel templating route for the synthesis of hierarchical porous calcium phosphate glasses containing zinccitations
- 2024Wound Healing Promotion via Release of Therapeutic Metallic Ions from Phosphate Glass Fibers: An In Vitro and Ex Vivo Studycitations
- 2017The water gas shift reaction over Pt–CeO2 nanoparticles confined within mesoporous SBA-16citations
- 2017Water Gas Shift Reaction over Pt-CeO2 Nanoparticles Confined within Mesoporous SBA-16citations
- 2017Cation distribution and vacancies in nickel cobaltitecitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devicescitations
- 2016An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margincitations
- 2016Engineering the switching dynamics of TiOx-based RRAM with Al dopingcitations
- 2016Copper‐Based Catalysts Supported on Highly Porous Silica for the Water Gas Shift Reactioncitations
- 2016Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
- 2012Exploring the effect of co doping in fine maghemite nanoparticlescitations
- 2008A high-energy X-ray diffraction, P-31 and B-11 solid-state NMR study of the structure of aged sodium borophosphate glassescitations
- 2007The structure and properties of silver-doped phosphate-based glassescitations
- 2007Structural characterization study of FeCo alloy nanoparticles in a highly porous aerogel silica matrixcitations
- 2007Structural study of highly porous nanocomposite aerogelscitations
- 2007An x-ray diffraction study of the structure of Bioglass and its sol-gel analogue as a function of composition
- 2006The use of advanced diffraction methods in the study of the structure of a bioactive calcia: silica sol-gel glasscitations
Places of action
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document
Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
Abstract
TiO<sub>2</sub> thin films have drawn a lot of attention for their application in emerging memory devices, such as resistive random access memory (ReRAM). However, TiO<sub>2</sub> ReRAM still faces reliability issues, including poor endurance, large device-to-device and cycle-to-cycle variability of switching parameters and low yields. Moreover, high electroforming voltages have been often associated with irreversible damage to devices. Doping of TiO<sub>2</sub> has been employed as a strategy for overcoming these issues. Therefore in this work, we used Al as a dopant in TiO<sub>2</sub> thin films to investigate its effect on electroforming and switching voltages of ReRAM devices. Conductive atomic force microscopy (C-AFM) measurements on these thin films, suggested that Al doping decreased the switching voltages compared to the undoped thin films. This result was confirmed by pulse voltage sweeping of ReRAM devices employing the same doped thin films. The Al-doped devices were on average electroforming at -5.7 V, compared to -6.4 V for the undoped ones, and they were switching with potentials as low as ±0.9 V. These findings suggest a potential pathway for implementing low-power ReRAM systems<br/>