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| Naji, M. |
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| Petrov, R. H. | Madrid |
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Vilquin, Bertrand
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Topics
Publications (68/68 displayed)
- 2024Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications
- 2024Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !
- 2024Stabilization of low dimensional ferroelectric HfZrO2 film
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Homo-epitaxial growth of Lithium Niobate by Pulsed-Laser Deposition
- 2023Thermal information processing using phase change materials
- 2023Thermal information processing using phase change materials
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2022Heteroepitaxial growth of Lithium Niobate Thin Films on sapphire substrates with different orientations by Pulsed-Laser Depositioncitations
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022Interface engineering for vanadium dioxide (VO2) integration on silicon
- 2022Integration of VO2 on Silicon for thermotronic applications
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2021The discovery of ferroelectricity in HfO2
- 2021The discovery of ferroelectricity in HfO2
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Développement d’un capteur environnemental ultra-basse consommation à base de SnO2 en technologie CMOS FDSOI
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Metallic oxide defect luminescent emission for application in solar cells and WLEDs
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Reduction of HfZrO2 capacitor wake-up effect
- 2019Ferroelectric hafnium/zirconium oxide solid solutions deposited by RF magnetron sputtering with a single target
- 2019Ferroelectric HfO2 based devices fabrication and remaining issues
- 2019Sputtered ferroelectric hafnium/zirconium oxide solid solutions from a single target
- 2019Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputteringcitations
- 2019Vanadium Oxide Based Waveguide Modulator Integrated on Silicon
- 2018Deposition of hafnium/zirconium oxides solid solution by reactive magnetron sputtering for fast and low power ferroelectric devices
- 2017Room-temperature soft mode and ferroelectric like polarization in SrTiO3 ultrathin films: Infrared and ab initio studycitations
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Surface atomic and chemical structure of relaxor Sr0.63Ba0.37Nb2O6(001)citations
- 2015Nanoscale study of perovskite BiFeO3/spinel (Fe, Zn)3O4 co-deposited thin film by electrical scanning probe methods
- 2015Towards ferroelectric control of topological insulators and surface states
- 2015Towards ferroelectric control of topological insulators and surface states
- 2014Phase transition in ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 epitaxial thin filmscitations
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performancecitations
- 2013Full field electron spectromicroscopy applied to ferroelectric materialscitations
- 2012Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO3 Thin Film after Dissociative Adsorption of Watercitations
- 2010Oxides heterostructures for nanoelectronicscitations
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document
The discovery of ferroelectricity in HfO2
Abstract
HfO2 is known to exist in three different crystal phases at normal pressure:monoclinic phase at 300K, a tetragonal phase above 2050K, and finally a cubic phase above 2803K. The stable region of the tetragonal phase extends to lower temperatures in nanoscale crystallites due to the surface energy effect. As a consequence, the crystallization in thin films tends to proceed by nucleation in a tetragonal phase and a martensitic transformation to the monoclinic phase during crystal growth. This phase transformation involves volume expansion and shearing of the unit cell. The admixture of sufficient SiO2 (between 5 and 10 mol.%) has been found to stabilize the tetragonal phase in HfO2 but in 2011, it was reported that also the presence of for the formation of ferroelectric and antiferroelectric crystalline phases in SiO2 doped HfO2 thin films. Based on X-ray diffraction measurements, it was argued that the ferroelectric phase is orthorhombic with a Pbc21 space group. The phase is formed due to inhibition of the tetragonal->monoclinic transformation by mechanical confinement. The occurrence of ferroelectricity in Si:HfO2 is remarkable as it represents one of very few metal oxides which are thermodynamically stable on silicon, leading to enable a number of device concepts relying on silicon/ferroelectric heterostructures. The different ways to stabilize the ferroelectricity in HfO2, the main properties of the material and the remaining issues will be presented.