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Romeo, Pédro Rojo
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Topics
Publications (6/6 displayed)
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2019Ferroelectric hafnium/zirconium oxide solid solutions deposited by RF magnetron sputtering with a single target
- 2019Ferroelectric HfO2 based devices fabrication and remaining issues
- 2019Sputtered ferroelectric hafnium/zirconium oxide solid solutions from a single target
- 2018Deposition of hafnium/zirconium oxides solid solution by reactive magnetron sputtering for fast and low power ferroelectric devices
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
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document
Ferroelectric HfO2 based devices fabrication and remaining issues
Abstract
New computer generations require micro-processors in close proximity to non-volatile memories (NVM), both working with low power consumption and high write speed. Since current FLASH technology cannot perform at these specifications, new memory solutions are necessary. Novel HfO2 based NVM cells could offer the required properties and have the advantage that HfO2 is already known for its compatibility with CMOS processing as shown in standard state-of-the-artlogic nodes. In contrast, current FRAM products on the market are limited by the properties of the ferroelectric PbZrTiO3 material resulting in scaling limitations. With the discovery of ferroelectricity in doped HfO2 the introduction into scaled non-volatile memory devices based on a one-transistor one-capacitor (1T-1C FRAM) or a one-transistor (1T FeFET) cell became possible. HfO2 shows ferroelectric properties when doped with a variety of different dopants in ~5-20 nm thin thickness range which enables further scaling of current memory devices. This presentation presents the current status of hafnium oxide material and based memory devices and their remaining issues.