| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vilquin, Bertrand
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (68/68 displayed)
- 2024Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications
- 2024Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !
- 2024Stabilization of low dimensional ferroelectric HfZrO2 film
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Homo-epitaxial growth of Lithium Niobate by Pulsed-Laser Deposition
- 2023Thermal information processing using phase change materials
- 2023Thermal information processing using phase change materials
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2022Heteroepitaxial growth of Lithium Niobate Thin Films on sapphire substrates with different orientations by Pulsed-Laser Depositioncitations
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022Interface engineering for vanadium dioxide (VO2) integration on silicon
- 2022Integration of VO2 on Silicon for thermotronic applications
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2021The discovery of ferroelectricity in HfO2
- 2021The discovery of ferroelectricity in HfO2
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Développement d’un capteur environnemental ultra-basse consommation à base de SnO2 en technologie CMOS FDSOI
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Metallic oxide defect luminescent emission for application in solar cells and WLEDs
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Reduction of HfZrO2 capacitor wake-up effect
- 2019Ferroelectric hafnium/zirconium oxide solid solutions deposited by RF magnetron sputtering with a single target
- 2019Ferroelectric HfO2 based devices fabrication and remaining issues
- 2019Sputtered ferroelectric hafnium/zirconium oxide solid solutions from a single target
- 2019Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputteringcitations
- 2019Vanadium Oxide Based Waveguide Modulator Integrated on Silicon
- 2018Deposition of hafnium/zirconium oxides solid solution by reactive magnetron sputtering for fast and low power ferroelectric devices
- 2017Room-temperature soft mode and ferroelectric like polarization in SrTiO3 ultrathin films: Infrared and ab initio studycitations
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Surface atomic and chemical structure of relaxor Sr0.63Ba0.37Nb2O6(001)citations
- 2015Nanoscale study of perovskite BiFeO3/spinel (Fe, Zn)3O4 co-deposited thin film by electrical scanning probe methods
- 2015Towards ferroelectric control of topological insulators and surface states
- 2015Towards ferroelectric control of topological insulators and surface states
- 2014Phase transition in ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 epitaxial thin filmscitations
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performancecitations
- 2013Full field electron spectromicroscopy applied to ferroelectric materialscitations
- 2012Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO3 Thin Film after Dissociative Adsorption of Watercitations
- 2010Oxides heterostructures for nanoelectronicscitations
Places of action
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document
Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
Abstract
In this work, the Hf0.5Zr0.5O2 (HZO) layer was realized by room temperature magnetron sputtering of a HZO ceramic target and subsequently crystallized by rapid thermal annealing [1]. The titanium nitride bottom and top electrodes were grown by reactive magnetron sputtering of a titanium target. We explored the impact of the insertion of an ultra-thin buffer layer at the HZO/top electrode interface on the stabilized crystalline phase, microstructure and electrical properties of thin HZO films. We investigated two materials, Ti and Al. Behind the annealing process Ti and Al turned into TiO2 and Al2O3 respectively, following the creation of oxygen vacancies inside the HZO barrier. The higher concentration of oxygen vacancies promoted by the addition of the buffer layer plays a significant role in the stabilisation of the orthorhombic phase for decreasing HZO thickness. This allowed us to synthesise very thin HZO films with ferroelectric properties. Furthermore we observed a clear improvement of the electrical performances of the n^ Si(001)/TiN/HZO/TiN/Ti/Pt structure. We exploited transmission electron microscopy to investigate the structure and the morphology of the electrode/HZO interfaces. X-ray reflectometry and grazing incidence X-ray diffraction were used to probe the thickness and structural characteristics of HZO layers. X-ray photoemission spectroscopy was used to analyse the chemistry and the electronic state of the HZO/electrode interface. We will discuss our results in the framework of structural, chemical and physical properties of the ferroelectric/electrode interfaces and their effect on the electrical properties of thin HZO-based tunnel junctions. The present optimized stack will eventually be considered for the demonstration of synaptic learning mechanisms for neuromorphic applications.References:[1] J. Bouaziz, P. R. Romeo, N. Baboux, and B. Vilquin, “Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films,” ACS Appl. Electron. Mater., vol. 1, no. 9, pp. 1740–1745, 2019, doi: 10.1021/acsaelm.9b00367.