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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Varpula, Aapo
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Topics
Publications (13/13 displayed)
- 2018Rapid Thermal Characterization of Materials with Ultra-High Resolution of Droplet Size Specimens using the Three-Omega Methodcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samplescitations
- 2018Thermal characterization of liquid and solid samples using a measurement platform for the bidirectional 3-omega method
- 2017Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranescitations
- 2015Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structurescitations
- 2011Electrical properties of granular semiconductors : modelling and experiments on metal-oxide gas sensorscitations
- 2011A compact quantum statistical model for the ballistic nanoscale MOSFETscitations
- 2010Magnetic polarons in ferromagnetic semiconductor single-electron transistorscitations
- 2010Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensorscitations
- 2010Modelling of dc characteristics for granular semiconductorscitations
- 2010Small-signal analysis of granular semiconductorscitations
- 2010Modeling of transient electrical characteristics for granular semiconductorscitations
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document
Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
Abstract
Thermoelectric devices consisting of a thermocouple or thermopile can be used as efficient detectors in various applications. Thermoelectric detectors themselves do not require external power to operate. This eliminates noise sources associated with electric current. This leaves thermal fluctuation and Johnson-Nyquist noises as the dominating ones. In frequencies well below thermal cut-off the internal noise-equivalent power of a thermoelectric detector is given by [1]NEP = NEPth[ 1+ 1/(ZeffT) ]1/2, (1)with NEPth=(4kBT2G)1/2, the NEP of the thermal fluctuation noise, kB, Boltzmann’s constant, T, the absolute temperature, G, the total thermal conductance between the detector hot junction(s) and the surroundings (including phonons and other thermal channels), ZeffT = S2T/(GR), the detector effective thermoelectric figure of merit, S, the total Seebeck coefficient of the thermocouple(s), and R, the total electric resistance of the thermocouple(s). In specific geometries and material parameter values ZeffT coincides with the text-book expression of the thermoelectric figure of merit ZT [1]. Equation (1) shows that when ZeffT>1, the internal noise is dominated by the fundamental NEPth only. Therefore, silicon nanomembranes [1–3] are attractive materials for thermoelectric detectors as they possess the relatively high power factor of silicon and their thermal conductivity can be reduced up to two orders of magnitude from the bulk value. We present thermoelectric thermal detectors based on silicon nanomembranes and demonstrate their use in scanning thermal microscopy. The devices have a built in heater that allows the device (Fig.) and material performance, and the SThM tip –device interaction to be characterized. When equipped with an optical absorber, this kind of detector can be optimized of infrared sensing as well [5]. We discuss also these applications.