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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sandberg, Henrik G. O.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2014Roll-to-roll compatible organic thin film transistor manufacturing technique by printing, lamination, and laser ablationcitations
- 2009Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods
- 2008Fabrication of thin-film organic memory elements
- 2008Polymer Field-Effect Transistors
- 2007Metallic nanoparticles in a polymeric matrix
- 2007Towards printable organic field-effect transistors based on poly(3, 3’’’-didodecyl quarter thiophene) utilizing a crosslinkable gate dielectric layer
- 2007Metallic nanoparticles in a polymeric matrix:Electrical impedance switching and negative differential resistance
- 2005A novel method to orient semiconducting polymer filmscitations
- 2004The influence of lipophilic additives on the emeraldine base-emeraldine salt transition of polyanilinecitations
Places of action
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conferencepaper
Towards printable organic field-effect transistors based on poly(3, 3’’’-didodecyl quarter thiophene) utilizing a crosslinkable gate dielectric layer
Abstract
The choice of materials and geometry are of primary concern in thefabrication of polymer field-effect transistors, since the consequent layersinteract with each other especially when strong or slowly evaporating solventsare used [1,2]. In this work we report on research towards roll-to-rollprintable materials and methods for the fabrication of organic transistors.Organic field-effect transistors (OFETs) have been made using the air stableconjugated polymer poly(3,3’’’-didodecyl quarter thiophene) (PQT) (ADS12PQTpurchased from American Dye Source Inc. and used as received) dissolved intoluene or dichlorobenzene (concentration typically 2 mg/ml). Two types ofroll-to-roll printing compatible dielectric layer solutions have been testedand deposited by spin coating : 1) solvent-based PVPh/pMF blend (PVPh =polyvinyl phenol, pMF = poly(melamine-co-formaldehyde) crosslinker) and 2)water-based PVA/Kymene solution (PVA = polyvinyl alcohol, Kymene is atrademark for a crosslinking agent based on polyamide-epichlorohydrinechemistry). The curing temperature of these dielectric layers is 150-180 ºCand 100-130 ºC, respectively. Both bottom-gate and top-gate geometry were usedin the fabrication, and it was noted that top-gate configuration gave thebest results. This solution processed polymer bi-layer demonstrates theviability of printable transistors.