693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Björklund, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
document
Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods
Abstract
Anodization of aluminium is very well known method to produce thickprotective layers of aluminium oxide on aluminium metal. Characteristics ofproduced aluminium oxide layer depend strongly of anodization parameters(acid, acid concentration, anodizing current, and temperature) [1-3]. We haveproduced thin (5-50 nm), insulating layers, with different acids and acidconcentrations. We have also used ALD and plasma oxidation methods to producealuminium oxide layers with similar thicknesses. Quality of the insulatinglayers produced by different methods is compared, as well as the operation asgate dielectric in finished TFT.