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Sandberg, Henrik G. O.
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Publications (9/9 displayed)
- 2014Roll-to-roll compatible organic thin film transistor manufacturing technique by printing, lamination, and laser ablationcitations
- 2009Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods
- 2008Fabrication of thin-film organic memory elements
- 2008Polymer Field-Effect Transistors
- 2007Metallic nanoparticles in a polymeric matrix
- 2007Towards printable organic field-effect transistors based on poly(3, 3’’’-didodecyl quarter thiophene) utilizing a crosslinkable gate dielectric layer
- 2007Metallic nanoparticles in a polymeric matrix:Electrical impedance switching and negative differential resistance
- 2005A novel method to orient semiconducting polymer filmscitations
- 2004The influence of lipophilic additives on the emeraldine base-emeraldine salt transition of polyanilinecitations
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document
Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods
Abstract
Anodization of aluminium is very well known method to produce thickprotective layers of aluminium oxide on aluminium metal. Characteristics ofproduced aluminium oxide layer depend strongly of anodization parameters(acid, acid concentration, anodizing current, and temperature) [1-3]. We haveproduced thin (5-50 nm), insulating layers, with different acids and acidconcentrations. We have also used ALD and plasma oxidation methods to producealuminium oxide layers with similar thicknesses. Quality of the insulatinglayers produced by different methods is compared, as well as the operation asgate dielectric in finished TFT.