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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Laitinen, Mikko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Thermomechanical properties of aluminum oxide thin films made by atomic layer depositioncitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2018Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface Chemistrycitations
- 2017Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO<sub>2</sub>citations
- 2017Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivationcitations
- 2016Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Filmscitations
- 2015Atomic layer deposited lithium aluminum oxidecitations
- 2014Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness and adhesioncitations
- 2013Atomic layer deposition of LixTiyOz thin filmscitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF(6) based plasmascitations
- 2012Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmascitations
- 2011Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide filmscitations
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document
ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
Abstract
Use of atomic layer deposition (ALD) inmicroelectromechanical systems (MEMS) has increased asALD enables conformal growth on 3-dimensional structuresat relatively low temperatures. For MEMS device designand fabrication, understanding of the residual stress andmechanical properties of thin film is crucial as theseinfluence directly the device properties and performance.Al2O3 from Me3Al and H2O is one of the most often usedmaterials, but even for that, a detailed study of themechanical properties as a function of ALD temperature ismissing. In this work a comprehensive study of thestress, elastic modulus, hardness and adhesion of atomiclayer deposited (ALD) Al2O3 films grown at 110 - 300 °Cfrom trimethylaluminum and deionized water is presented.Film stress was analysed by wafer curvature measurementsand Stoney's equation, elastic modulus by nanoindentationand surface-acoustic wave measurements, hardness bynanoindentation, and adhesion by microscratch testing andscanning nanowear measurements. The films were alsoanalysed by ellipsometry, optical reflectometry, x-rayrefl ectivity and time-of-flight elastic recoil detectionfor refractive index, thickness, density and impurities.The ALD Al2O3 films were under tensile stress, in thescale of hundreds of MPa. The magnitude of the residualstress decreased strongly with increasing ALDtemperature. Growth-induced stress accounted for most ofthe stress at low ALD temperature and its importancedecreased with increasing ALDtemperature. The stress was independent of the type ofALD reactor used. Films grown at 150 to 300 °C had afairly constant elastic modulus about 170 GPa andhardness of 10-11 GPa. Films grown at 110 °C were softerwith a lower elastic modulus, which can at least partlyexplained by the higher residual hydrogen content in thefilms. ALD Al2O3 films adhered strongly on RCA-cleanedsilicon with SiOx termination. The large set of dataobtained in this work as a function of ALD temperatureallowed a more detailed observation of the trends in themeasured properties than has been possible before. Forexample, a continuously increasing elastic modulus as afunction of ALD temperature was not observed in thisstudy. Instead, after initial increase at low temperatureelastic modulus settled to approximately constantvalue at 150 °C.