| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ylivaara, Oili
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Nonlinear Dynamics of Large-Angle Circular Scanning With an Aluminum Nitride Micro-Mirrorcitations
- 2018Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride filmscitations
- 2016Thermal conductivity of amorphous Al 2 O 3 / TiO 2 nanolaminates deposited by atomic layer depositioncitations
- 2016Effect of precursor chemistry on residual stress of ALD Al 2 O 3 and TiO 2 films
- 2016Study of processing parameters on the mechanical and compositional properties of plasma-enhanced atomic layer deposition aluminum nitride films
- 2016Highly conformal TiN by atomic layer deposition:growth and characterization
- 2016Residual stress in thin films made by atomic layer deposition
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion:residual stress, elastic modulus, hardness and adhesion
- 2013ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
- 2012On the nanoindentation characterization of Al2O3 thin films grown on Si-wafer by atomic layer deposition
- 2012Adhesion performance and tribological properties of atomic layer deposited aluminum oxide films
- 2010Direct wafer bonding of ALD Al2O3
Places of action
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document
ALD Al2O3 from TMA and water on Si: residual stress, elastic modulus, hardness and adhesion
Abstract
Use of atomic layer deposition (ALD) inmicroelectromechanical systems (MEMS) has increased asALD enables conformal growth on 3-dimensional structuresat relatively low temperatures. For MEMS device designand fabrication, understanding of the residual stress andmechanical properties of thin film is crucial as theseinfluence directly the device properties and performance.Al2O3 from Me3Al and H2O is one of the most often usedmaterials, but even for that, a detailed study of themechanical properties as a function of ALD temperature ismissing. In this work a comprehensive study of thestress, elastic modulus, hardness and adhesion of atomiclayer deposited (ALD) Al2O3 films grown at 110 - 300 °Cfrom trimethylaluminum and deionized water is presented.Film stress was analysed by wafer curvature measurementsand Stoney's equation, elastic modulus by nanoindentationand surface-acoustic wave measurements, hardness bynanoindentation, and adhesion by microscratch testing andscanning nanowear measurements. The films were alsoanalysed by ellipsometry, optical reflectometry, x-rayrefl ectivity and time-of-flight elastic recoil detectionfor refractive index, thickness, density and impurities.The ALD Al2O3 films were under tensile stress, in thescale of hundreds of MPa. The magnitude of the residualstress decreased strongly with increasing ALDtemperature. Growth-induced stress accounted for most ofthe stress at low ALD temperature and its importancedecreased with increasing ALDtemperature. The stress was independent of the type ofALD reactor used. Films grown at 150 to 300 °C had afairly constant elastic modulus about 170 GPa andhardness of 10-11 GPa. Films grown at 110 °C were softerwith a lower elastic modulus, which can at least partlyexplained by the higher residual hydrogen content in thefilms. ALD Al2O3 films adhered strongly on RCA-cleanedsilicon with SiOx termination. The large set of dataobtained in this work as a function of ALD temperatureallowed a more detailed observation of the trends in themeasured properties than has been possible before. Forexample, a continuously increasing elastic modulus as afunction of ALD temperature was not observed in thisstudy. Instead, after initial increase at low temperatureelastic modulus settled to approximately constantvalue at 150 °C.