| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Tseng, Tseung-Yuen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Flower-like nanosheets FeCo2O4 for application in supercapacitor and dye-sensitized solar cellcitations
- 2021Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computingcitations
- 2021Transformation of digital to analog switching in TaO x -based memristor device for neuromorphic applicationscitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2020Facile and One-Step in Situ Synthesis of Pure Phase Mesoporous Li2MnSiO4/CNTs Nanocomposite for Hybrid Supercapacitorscitations
- 2020The synergistic effect of iron cobaltite compare to its single oxides as cathode in supercapacitorcitations
- 2020Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memorycitations
- 2019Synthesis of Free-Standing Flexible rGO/MWCNT Films for Symmetric Supercapacitor Applicationcitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
- 2017Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devicescitations
- 2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmscitations
Places of action
| Organizations | Location | People |
|---|
article
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
Abstract
<p>The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO<sub>2</sub>-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO<sub>2</sub>/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO<sub>2</sub> devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.</p>