| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Ishikawa, Ryousuke
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Solid-phase crystallization of amorphous silicon nanowire array and optical properties
Abstract
An amorphous silicon nanowire (a-SiNW) array perpendicular to a glass substrate can be successfully obtained through the metal-assisted chemical etching of amorphous silicon (a-Si) thin films. The solid-phase crystallization of a-SiNWs was carried out by thermal annealing in a forming gas in the temperature range from 600 to 900 °C. The effects of hydrogen in the film and the film morphology on the crystallization of a-SiNWs were investigated by Raman spectroscopy and transmission electron microscopy. A higher hydrogen concentration of a-SiNWs reduced the crystallization temperature, as in a-Si thin films. It was also revealed that the large surface area of the a-SiNW array affected the crystallization process. We also studied the optical property of the fabricated SiNW array and demonstrated its high potential as an active layer in solar cells.