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Visalli, Domenica
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article
1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal
Abstract
We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically enhance the off-state breakdown voltage of the transistors. The three-terminal breakdown voltage of these devices using a gate-drain distance of 15μm increased significantly, from 750V to 1.9 kV, after local substrate removal. The high two-dimensional electron gas carrier density (2.3 ' 1013cm%2) associated with the low sheet resistance enables a record combination of a specific on-resistance (1.6mΩcm2) and high breakdown voltage for GaN-on-Si transistors.