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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kusch, Gunnar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cellscitations
- 20233D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells.
- 20233D perovskite passivation with a benzotriazole-based 2D interlayer for high-efficiency solar cellscitations
- 2022Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
- 2022Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs 2 AgBiBr 6 Thin Films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Filmscitations
- 2020Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscopecitations
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2019Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDscitations
- 2017Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopycitations
- 2016Self-healing thermal annealingcitations
Places of action
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article
Indium incorporation in quaternary Inx Aly Ga1-x-y N for UVB-LEDs
Abstract
<p>Consistent studies of the quaternary composition are rare as it is impossible to fully determine the quaternary composition by X-ray diffraction or deduce it from that of ternary alloys. In this paper we determined the quaternary composition by wavelength dispersive X-ray spectroscopy of In<sub>x</sub> Al<sub>y</sub> layers grown by metal organic vapor phase epitaxy. Further insights explaining the peculiarities of In<sub>x</sub> Al<sub>y</sub> Ga<sub>1-x-y</sub>N growth in a showerhead reactor were gained by simulations of the precursor decomposition, gas phase adduct formation and indium incorporation including desorption. The measurements and simulations agree very well showing that the indium incorporation in a range from 0% to 2% is limited by desorption which is enhanced by the compressive strain to the relaxed Al<sub>0.5</sub>Ga<sub>0.5</sub>N buffer layer as well as indium incorporation into AlN particles forming in the gas phase. Utilizing In<sub>x</sub> Al<sub>y</sub> Ga<sub>1-x-y</sub>N layers containing 2% of indium for multiple quantum wells (MQWs), it was possible to show an almost five times higher photoluminescence intensity of InAlGaN MQWs in comparison to AlGaN MQWs.</p>