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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Törndahl, Tobias
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Silver Alloying in Highly Efficient CuGaSe 2 Solar Cells with Different Buffer Layerscitations
- 2023Silver Alloying in Highly Efficient CuGaSe2 Solar Cells with Different Buffer Layerscitations
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022Atomic Layer Grown Zinc–Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells: Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2022Surface/Interface Effects by Alkali Postdeposition Treatments of (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cellscitations
- 2022Circumventing Thermodynamic Constraints in Nucleation-Controlled Crystallization of Al2TiO5-Based Chemical Vapor Deposition Coatingscitations
- 2022Atomic Layer Grown Zinc-Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells : Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2020Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cellscitations
- 2020Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorberscitations
- 2019Atomic layer deposition of amorphous tin-gallium oxide filmscitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Zinc-Tin-Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd-Free Cu2ZnSnS4 Solar Cellcitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2017ALD of phase controlled tin monosulfide thin films
- 2014Dynamic parameter estimation of atomic layer deposition kinetics applied to in situ quartz crystal microbalance diagnosticscitations
- 2013Surface engineering in Cu(In,Ga)Se2 solar cellscitations
Places of action
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document
Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
Abstract
We report a detailed characterization of an industry-like prepared Cu(In, Ga)Se 2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu 2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.