| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Leitão, Joaquim P.
University of Aveiro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Cu(In,Ga)Se$$_2$$-based solar cells for space applications: proton irradiation and annealing recoverycitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2015Nanocrystalline thin film silicon solar cells: A deeper look into p/i interface formationcitations
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document
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
Abstract
In this work we present a method to grow Sb2Se3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si. The Sb-Se precursor's films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and morphological analyses were performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be improved in order that these films can be integrated into thin film solar cells.