| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sadewasser, Sascha
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Towards All-Non-Vacuum-Processed Photovoltaic Systems: A Water-Based Screen-Printed Cu(In,Ga)Se2 Photoabsorber with a 6.6% Efficiencycitations
- 2021Novel Polymorph of GaSecitations
- 2021Efficient reSe2 photodetectors with CVD single-crystal graphene contactscitations
- 2021Scanning Transmission Electron Microscopy Investigations of an Efficiency Enhanced Annealed Cu(In1-xGax)Se2 Solar Cells with Sputtered Zn(O,S) Buffer Layer
- 2019Micro-Solar Cells By Electrodeposition into a Microelectrode Array – Effect of Dot Diameter
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxycitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
Places of action
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document
Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
Abstract
Recently, the compound semiconductor Cu 3 BiS 3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu 3 BiS 3 absorber layer and the junction formation with CdS, ZnS and In 2 S 3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In 2 S 3 compared to that of CdS and ZnS. For In 2 S 3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu 3 BiS 3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In 2 S 3 buffer layer. Our findings indicate that Cu 3 BiS 3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.