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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Edoff, Marika
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024High-concentration silver alloying and steep back-contact gallium grading enabling copper indium gallium selenide solar cell with 23.6% efficiencycitations
- 2023Silver Alloying in Highly Efficient CuGaSe 2 Solar Cells with Different Buffer Layerscitations
- 2023Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technologycitations
- 2023Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2023Silver Alloying in Highly Efficient CuGaSe2 Solar Cells with Different Buffer Layerscitations
- 2021Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se2 solar absorberscitations
- 2021Alkali Dispersion in (Ag,Cu)(In,Ga)Se-2 Thin Film Solar Cells-Insight from Theory and Experimentcitations
- 2021Alkali dispersion in (Ag,Cu)(In,Ga)Se2 thin film solar cells – Insight from theory and experimentcitations
- 2021High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cellscitations
- 2020Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cellscitations
- 2020Thermodynamic stability, phase separation and Ag grading in (Ag,Cu)(In,Ga)Se-2 solar absorberscitations
- 2020Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorberscitations
- 2019Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar Cellscitations
- 2019Atomic layer deposition of amorphous tin-gallium oxide filmscitations
- 2019Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devicescitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Filmscitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2017ALD of phase controlled tin monosulfide thin films
- 2015Investigating the electronic properties of Al2O3/Cu(In, Ga)Se-2 interfacecitations
- 2014Potential-induced optimization of ultra-thin rear surface passivated CIGS solar cellscitations
- 2014Optimizing Ga-profiles for highly efficient Cu(In,Ga)Se2 thin film solar cells in simple and complex defect modelscitations
- 2013Development of Rear Surface Passivated Cu(In,Ga)Se2 Thin Film Solar Cells with Nano-Sized Local Rear Point Contactscitations
- 2013Surface engineering in Cu(In,Ga)Se2 solar cellscitations
- 2011Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporationcitations
Places of action
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document
CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
Abstract
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and ZnxSn1−xOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (Jsc) that compensate for lower values in fill factor (FF) and open circuit voltage (Voc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.