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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Azevedo, Nuno Monteiro |
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Nicoara, Nicoleta
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2021Efficient reSe2 photodetectors with CVD single-crystal graphene contactscitations
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxycitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
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document
CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
Abstract
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and ZnxSn1−xOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (Jsc) that compensate for lower values in fill factor (FF) and open circuit voltage (Voc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.