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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Törndahl, Tobias
Uppsala University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Silver Alloying in Highly Efficient CuGaSe 2 Solar Cells with Different Buffer Layerscitations
- 2023Silver Alloying in Highly Efficient CuGaSe2 Solar Cells with Different Buffer Layerscitations
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022Atomic Layer Grown Zinc–Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells: Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2022Surface/Interface Effects by Alkali Postdeposition Treatments of (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cellscitations
- 2022Circumventing Thermodynamic Constraints in Nucleation-Controlled Crystallization of Al2TiO5-Based Chemical Vapor Deposition Coatingscitations
- 2022Atomic Layer Grown Zinc-Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells : Influence of Absorber Surface Treatment on Buffer Layer Growthcitations
- 2020Amorphous tin-gallium oxide buffer layers in (Ag,Cu)(In,Ga)Se2 solar cellscitations
- 2020Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorberscitations
- 2019Atomic layer deposition of amorphous tin-gallium oxide filmscitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Zinc-Tin-Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd-Free Cu2ZnSnS4 Solar Cellcitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2017ALD of phase controlled tin monosulfide thin films
- 2014Dynamic parameter estimation of atomic layer deposition kinetics applied to in situ quartz crystal microbalance diagnosticscitations
- 2013Surface engineering in Cu(In,Ga)Se2 solar cellscitations
Places of action
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document
CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
Abstract
Thin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and ZnxSn1−xOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (Jsc) that compensate for lower values in fill factor (FF) and open circuit voltage (Voc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.