| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Selberherr, Siegfried
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2020Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAMcitations
- 2016Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stresscitations
- 2014Microstructural Impact on Electromigration: A TCAD Studycitations
- 2013Multiple Purpose Spin Transfer Torque Operated Devices
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2011Modeling Electromigration Lifetimes of Copper Interconnectscitations
- 2009valley splitting in thin silicon films from a two band k p model
- 2009The Effect of Microstructure on Electromigration-Induced Failure Developmentcitations
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
- 2009Analysis of Electromigration in Dual-Damascene Interconnect Structures
- 2007Electromigration Modeling for Interconnect Structures in Microelectronics
Places of action
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article
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
Abstract
<jats:p>Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tunnel barrier. The FL usually consists of several sub-layers separated by nonmagnetic buffer layers. The magnetization dynamics is governed by the Landau-Lifshitz-Gilbert (LLG) equation supplemented with the corresponding torques. To accurately design MRAM cells it is necessary to evaluate the torques in composite magnetic layers, which depend on nonequilibrium spin accumulation generated by an electric current. Spin accumulation and current also depend on the magnetization. Therefore, the LLG and the spin-charge transport equations must be solved simultaneously. We apply the finite element method (FEM) to numerically solve this coupled system of partial differential equations. We follow a modular approach and use well-developed C++ FEM libraries. For the computation of the torques acting in a magnetic tunnel junction (MTJ), a magnetization-dependent resistivity of the tunnel barrier is introduced. A fully three-dimensional solution of the equations is performed to accurately model the torques acting on the magnetization. The use of a unique set of equations for the whole memory cell is an ultimate advantage of our approach.</jats:p>