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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Czerwosz, Elżbieta
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Publications (5/5 displayed)
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2017SEM and Raman studies of CNT films on porous Sicitations
- 2015Influence of Substrate Type on Structure of C-Pd Thin Filmscitations
- 2014Infiuence of Hydrogen on the Properties of Nanostructured C-Pd Films for Sensing Applicationscitations
- 2013Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
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article
Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
Abstract
Morphology changes of C–Pd films prepared in physical vapor deposition (PVD) process and nextannealed in a temperature of 650 °C during different time were studied. These studies wereperformed with electron microscopy methods (scanning SEM and transmission TEM). It was foundthat not annealed films are flat and they are composed of grains with composite character and sizeof 100–200 nm. Pd nanocrystallite of a diameter of a few nanometers in some carbon matrix wasplaced in these grains. For annealed films, a formation of palladium nanograins with different sizesand shapes as well as a porous carbon matrix were observed. High resolution TEM investigationwas used to determine a structure of all these grains. An increase in duration time of annealingprocess led to diminishing of the porosity of carbon matrix and a number of Pd grains situated onthe film surface. It was also stated that covering of Si with SiO2 layer prevents formation ofpalladium silicide.