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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Firek, Piotr
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2017SEM and Raman studies of CNT films on porous Sicitations
- 2016Comparison of the structural and corrosion properties of the graphene/SiN(200) coating system deposited on titanium alloy surfaces covered with SiN transition layerscitations
- 2016Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
- 2015Sensing properties of periodic stack of nano-films deposited with various vapor-based techniques on optical fiber end-facecitations
- 2015Influence of Substrate Type on Structure of C-Pd Thin Filmscitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
Places of action
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article
Annealing time effects on the surface morphology of C–Pd films prepared on silicon covered with SiO2
Abstract
Morphology changes of C–Pd films prepared in physical vapor deposition (PVD) process and nextannealed in a temperature of 650 °C during different time were studied. These studies wereperformed with electron microscopy methods (scanning SEM and transmission TEM). It was foundthat not annealed films are flat and they are composed of grains with composite character and sizeof 100–200 nm. Pd nanocrystallite of a diameter of a few nanometers in some carbon matrix wasplaced in these grains. For annealed films, a formation of palladium nanograins with different sizesand shapes as well as a porous carbon matrix were observed. High resolution TEM investigationwas used to determine a structure of all these grains. An increase in duration time of annealingprocess led to diminishing of the porosity of carbon matrix and a number of Pd grains situated onthe film surface. It was also stated that covering of Si with SiO2 layer prevents formation ofpalladium silicide.