| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Liu, Yang
Imperial College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Lead‐free halide perovskite materials and optoelectronic devices: progress and prospectivecitations
- 2024Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
- 2023Exploring the hydride-slip interaction in zirconium alloyscitations
- 2023Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
- 2023Lead-Free Halide Perovskite Materials and Optoelectronic Devices: Progress and Prospectivecitations
- 2023Open-source environmental data as an alternative to snail surveys to assess schistosomiasis risk in areas approaching elimination
- 2023Lead‐Free Halide Perovskite Materials and Optoelectronic Devices: Progress and Prospectivecitations
- 2022Photon Drag Currents and Terahertz Generation in α-Sn/Ge Quantum Wellscitations
- 2022Simulation of crystal plasticity in irradiated metals: a case study on Zircaloy-4citations
- 2021Characterisation of microstructural creep, strain rate and temperature sensitivity and computational crystal plasticity in Zircaloy-4citations
- 2019Quantifying the mechanical properties of polymeric tubing and scaffold using atomic force microscopy and nanoindentationcitations
- 2019Texture and phase variation of ALD PbTiO3 films crystallized by rapid thermal annealcitations
- 2019Screening Approach for the Discovery of New Hybrid Perovskites with Efficient Photoemissioncitations
- 2019Mechanical and chemical characterisation of bioresorbable polymeric stent over two-year in vitro degradationcitations
- 2018Cellular response to cyclic compression of tissue engineered intervertebral disk constructs composed of electrospun polycaprolactonecitations
- 2018Enhanced Water Barrier Properties of Surfactant-Free Polymer Films Obtained by MacroRAFT-Mediated Emulsion Polymerizationcitations
- 2017Prediction of linear and non-linear behavior of 3D woven composite using mesoscopic voxel models reconstructed from X-ray micro-tomographycitations
- 2017174 Comparison of the mechanical performance of polymeric and metallic scaffolds – testing and modelling
- 2017Numerical Modelling of Effects of Biphasic Layers of Corrosion Products to the Degradation of Magnesium Metal In Vitrocitations
- 2017Bandgap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenidescitations
- 2017Compact Brillouin devices through hybrid integration on siliconcitations
- 2017A numerical approach to reconstruct mesoscopic yarn section of textile composites based upon X-ray micro-tomography
- 2016Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
- 2015Film thickness of vertical upward co-current adiabatic flow in pipescitations
- 2014Bifunctional organic/inorganic nanocomposites for energy harvesting, actuation and magnetic sensing applicationscitations
Places of action
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document
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Abstract
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better electron confinement and high-quality interfaces, promising for room temperature electrically pumped GeSn laser devices. Therefore, understanding and quantitatively characterizing the band alignment in this grafted heterojunction is crucial. In this study, we explore the band alignment in the grafted monocrystalline Al0.3Ga0.7As /Ge0.853Sn0.147 p-i-n heterojunction. We determined the bandgap values of AlGaAs and GeSn to be 1.81 eV and 0.434 eV by photoluminescence measurements, respectively. We further conducted X-ray photoelectron spectroscopy measurements and extracted a valence band offset of 0.19 eV and a conduction band offset of 1.186 eV. A Type-I band alignment was confirmed which effectively confining electrons at the AlGaAs/GeSn interface. This study improves our understanding of the interfacial band structure in grafted AlGaAs/GeSn heterostructure, providing experimental evidence of the Type-I band alignment between AlGaAs and GeSn, and paving the way for their application in laser technologies.