| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Catalan, Gustau
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Photostrictive Actuators Based on Freestanding Ferroelectric Membranescitations
- 2024Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
- 2023Enhanced photostrictive actuation in freestanding ferroelectric membranes
- 2022Effect of humidity on the writing speed and domain wall dynamics of ferroelectric domainscitations
- 2022Effect of Humidity on the Writing Speed and Domain Wall Dynamics of Ferroelectric Domainscitations
- 2021Strong strain gradients and phase coexistence at the metal-insulator transition in VO2 epitaxial filmscitations
- 2021Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO3Thin Film Deposited in a Composition-Spread Geometrycitations
- 2021Non-linear nanoscale piezoresponse of single ZnO nanowires affected by piezotronic effect
- 2020Control of lateral composition distribution in graded films of soluble solid systems A1-xBx by partitioned dual-beam pulsed laser depositioncitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO 3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2017Domain wall magnetoresistance in BiFeO₃ thin films measured by scanning probe microscopy
- 2016Above-Bandgap Photovoltages in Antiferroelectricscitations
- 2016A flexoelectric microelectromechanical system on siliconcitations
- 2009Effect of chemical substitution on the Neacuteel temperature of multiferroic Bi1-xCaxFeO3citations
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document
Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
Abstract
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.