| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sawicki, Maciej
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2025Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic couplingcitations
- 2024Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
- 2024Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
- 2024Spin Hall magnetoresistance in Pt/(Ga,Mn)N devicescitations
- 2023Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistancecitations
- 2023Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layerscitations
- 2023Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layerscitations
- 2019Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2013Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
- 2012GaMnN epitaxial films with high magnetization
- 2012Manipulating Mn-Mg-k cation complexes to control the charge- and spin-state of Mn in GaNcitations
- 2011Structural and paramagnetic properties of dilute Ga1-xMnxN
- 2010Structural and paramagnetic properties of dilute Ga1-xMnxNcitations
- 2010Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAscitations
- 2010Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)Ascitations
- 2009Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
- 2007Paramagnetic GaN : Fe and ferromagnetic (Ga,Fe)N: The relationship between structural, electronic, and magnetic propertiescitations
Places of action
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document
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Abstract
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6 10^{14} \, Ω^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.