Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2024Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors2citations

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Taniguchi, Takashi
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Petrić, Marko M.
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Mhenni, Amine Ben
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Geilen, Leonard
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Finley, Jonathan J.
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Tuan, Dinh Van
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Müller, Kai
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Wilson, Nathan P.
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Dery, Hanan
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Watanabe, Kenji
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Tongay, Sefaattin
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Barbone, Matteo
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2024

Co-Authors (by relevance)

  • Taniguchi, Takashi
  • Petrić, Marko M.
  • Mhenni, Amine Ben
  • Geilen, Leonard
  • Finley, Jonathan J.
  • Tuan, Dinh Van
  • Müller, Kai
  • Wilson, Nathan P.
  • Dery, Hanan
  • Watanabe, Kenji
  • Tongay, Sefaattin
  • Barbone, Matteo
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document

Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors

  • Erdi, Melike
  • Taniguchi, Takashi
  • Petrić, Marko M.
  • Mhenni, Amine Ben
  • Geilen, Leonard
  • Finley, Jonathan J.
  • Tuan, Dinh Van
  • Müller, Kai
  • Wilson, Nathan P.
  • Dery, Hanan
  • Watanabe, Kenji
  • Tongay, Sefaattin
  • Barbone, Matteo
Abstract

Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.

Topics
  • impedance spectroscopy
  • phase
  • dielectric constant
  • semiconductor
  • layered