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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Beyer, Andreas
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Topics
Publications (9/9 displayed)
- 2024Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
- 2024A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructurescitations
- 2023Kinking of GaP Nanowires Grown in an In Situ (S)TEM Gas Cell Holdercitations
- 2022Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cycling
- 2022Advanced Analytical Characterization of Interface Degradation in Ni-Rich NCM Cathode Co-Sintered with LATP Solid Electrolytecitations
- 2021Understanding the formation of antiphase boundaries in layered oxide cathode materials and their evolution upon electrochemical cyclingcitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2016INFLUENCE OF THE COOLING RATE AND THE BLEND RATIO ON THE PHYSICAL STABILTIY OF CO-AMORPHOUS NAPROXEN/INDOMETHACINcitations
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
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document
Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Abstract
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated electron energy loss spectroscopy in a scanning transmission electron microscope is employed to characterize the excitonic spectrum of WS2 on graphene grown by metal organic chemical vapor deposition. This technique provides the required spatial resolution at the nanometer scale in combination with high quality spectra. To complement the experimental results, theoretical investigations using density functional theory and applying the Bethe-Salpeter equations are conducted. We find that by transitioning from mono- to bi- to multilayers of WS2 the spectra show redshifts for both, the K-valley excitons at about 2.0 and 2.4 eV as well as excitonic features of higher energies. The latter features originate from so called band nesting of transitions between the Gamma- and K-point. In summary, this study provides valuable insights into the excitonic properties of WS2 in different layer configurations and environments, which are realistically needed for future device fabrication and property tuning. Finally, we can show that nanometer scale electron spectroscopy supported by careful theoretical modelling can successfully link atomic structure and optical properties, such as exciton shifts, in non-idealized complex material systems like multilayer 2D heterostructures.