| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Siebentritt, Susanne
University of Luxembourg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
- 2024Composition dependence of electronic defects in CuGaS2citations
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2023Chalcopyrite solar cells —state-of-the-art and options for improvementcitations
- 2023On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se2citations
- 2023Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb<sub>2</sub>Se<sub>3</sub>/CdS stacks for reduced interface recombination and increased open‐circuit voltagescitations
- 2023CuIn(Se,Te)2 absorbers with bandgaps <1 eV for bottom cells in tandem applications
- 2022Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cellscitations
- 2022How much gallium do we need for a p-type Cu(In,Ga)Se<sub>2</sub>?citations
- 2021Passivating Surface Defects and Reducing Interface Recombination in CuInS<sub>2</sub> Solar Cells by a Facile Solution Treatmentcitations
- 2021The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cellscitations
- 2020Oxidation as Key Mechanism for Efficient Interface Passivation in Cu (In,Ga)Se2 Thin-Film Solar Cells
- 2020Ultra-thin passivation layers in Cu(In,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping
- 2016Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4 : Theoretical and experimental investigationscitations
- 2015Epitaxial Cu2ZnSnSe4 thin films and devicescitations
- 2014Single second laser annealed CuInSe2 semiconductors from electrodeposited precursors as absorber layers for solar cellscitations
- 2012Thin film solar cells based on the ternary compound Cu2SnS3citations
- 2008Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8citations
Places of action
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article
CuIn(Se,Te)2 absorbers with bandgaps <1 eV for bottom cells in tandem applications
Abstract
Thin-film solar cells reach high efficiencies and have a low carbon footprint in production. Tandem solar cells have the potential to significantly increase the efficiency of this technology, where the bottom-cell is generally composed of a Cu(In,Ga)Se2 absorber layer with bandgaps around 1 eV or higher. Here, we investigate CuIn(Se1-xTex)2 absorber layers and solar cells with bandgaps below 1 eV, which will bring the benefit of an additional degree of freedom for designing current-matched 2-terminal tandem devices. We report that CuIn(Se1-xTex)2 thin films can be grown single phase by co-evaporation and that the bandgap can be reduced to the optimum range for a bottom cell (0.92 - 0.95 eV). From photoluminescence spectroscopy it is found that no additional non-radiative losses are introduced to the absorber. However, Voc losses occur in the final solar cell due to non-optimised interfaces. Nevertheless, a record device with 9 % power conversion efficiency is demonstrated with a bandgap of 0.96 eV and x=0.15. Interface recombination is identified as a major recombination channel for larger Te contents. Thus, further efficiency improvements are anticipated for improved absorber/buffer interfaces.