• Gambin, Vincent
• Su, Xin
• Abbasi, Haris
• Ng, Tien Khee
• Singh, Ranveer
• Qiu, Shuoyang
• Kim, Donghyeok
• Jang, Hokyung
• Alema, Fikadu
• Pasayat, Shubhra S.
• Osinsky, Andrei
• Gupta, Chirag
• Wang, Qingxiao
• Jessen, Gregg
• Chabak, Kelson
• Cheung, Clincy
• Ooi, S.
• Gong, Jiarui
• Ma, Zhenqiang
• Lin, Qinchen

Abstract

The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.

Topics

• dispersion
• surface
• Oxygen
• semiconductor