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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Guillemoles, Jean-François
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures
- 2023Breaking 1.7V open circuit voltage in large area transparent perovskite solar cells using bulk and interfaces passivation.citations
- 2023The modulated photoluminescence technique versus temperature: opportunities for better determination of trap parameters
- 2023The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wellscitations
- 2022In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
- 2021Mapping Transport Properties of Halide Perovskites via Short-Time-Dynamics Scaling Laws and Subnanosecond-Time-Resolution Imagingcitations
- 2021In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
- 2021The influence of relative humidity upon Cu(In,Ga)Se2 thin-film surface chemistry: an X-ray photoelectron spectroscopy studycitations
- 2020Backside light management of 4-terminal bifacial perovskite/silicon tandem PV modules evaluated under realistic conditionscitations
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2019MIS Structures for Solar Cells Perimeter Passivation
- 2019Cu depletion on Cu(In,Ga)Se2 surfaces investigated by chemical engineering: An x-ray photoelectron spectroscopy approachcitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Tuning the chemical properties of europium complexes as downshifting agents for copper indium gallium selenide solar cellscitations
- 2017EuIII‐Based Nanolayers as Highly Efficient Downshifters for CIGS Solar Cellscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
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article
The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures
Abstract
Under continuous-wave laser excitation in an InGaAs multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm excitation compared with 980 nm excitation, as the injected carrier density increases. Ensemble Monte Carlo simulation of the carrier dynamics in the MQW system shows that this carrier temperature rise is dominated by nonequilibrium LO phonon effects, with the Pauli exclusion having a significant effect at high carrier densities. Further, we find a significant fraction of carriers reside in the satellite L-valleys for 405 nm excitation due to strong intervalley transfer, leading to a cooler steady-state electron temperature in the central valley compared with the case when intervalley transfer is excluded from the model. Good agreement between experiment and simulation has been shown, and a detailed analysis has been presented. This study expands our knowledge of the dynamics of the hot carrier population in semiconductors, which can be applied to further limit energy loss in solar cells. Comment: 22 pages, 7 figures, submitted for publication