| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Jourdan, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Direct observation of altermagnetic band splitting in CrSb thin filmscitations
- 2024Magnetic domain engineering in antiferromagnetic CuMnAs and Mn 2 Aucitations
- 2023Direct observation of altermagnetic band splitting in CrSb thin films
- 2023Current-driven writing process in antiferromagnetic Mn2Au for memory applicationscitations
- 2023Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices
- 2022Optically triggered Neel vector manipulation of a metallic antiferromagnet Mn2Au under strain
- 2022Optically Triggered Néel Vector Manipulation of a Metallic Antiferromagnet Mn2Au under Straincitations
- 2021Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloycitations
- 2021Optical readout of the Néel vector in the metallic antiferromagnet Mn2 Au
- 2020Néel vector induced manipulation of valence states in the collinear antiferromagnet Mn2Au
- 2020High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy
- 2020Magnetoresistance effects in the metallic antiferromagnet Mn2Au
- 2019Unidirectional spin Hall magnetoresistance as a tool for probing the interfacial spin polarization of Co2MnSi
- 2019Surface resonance of thin films of the Heusler half-metal Co2MnSi probed by soft x-ray angular resolved photoemission spectroscopy
- 2018Signature of a highly spin polarized resonance state at $mathrm{Co_{2}MnSi(0 0 1)/Ag(0 0 1)}$ interfacescitations
- 2018Direct imaging of antiferromagnetic domains in Mn2Au manipulated by high magnetic fields
- 2018Experimental determination of exchange constants in antiferromagnetic Mn2Au
- 2018Signature of a highly spin polarized resonance state at Co2MnSi(001)/Ag(001) interfaces
- 2018Complex terahertz and direct current inverse spin Hall effect in YIG/Cu1-xIrx bilayers across a wide concentration range
- 2011Spectroscopy of the electronic states of the Heusler compounds Co2FeAl and Co2Cr0.6Fe0.4Al and the influence of oxidationcitations
Places of action
| Organizations | Location | People |
|---|
document
Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices
Abstract
Antiferromagnetic (AF) materials hold potential for use in spintronic devices with fast operation frequencies and robustness against magnetic field perturbations. However, the precise tuning of material properties such as magnetic anisotropy and domain structure is crucial for efficient device functionality, yet poorly understood in fully compensated antiferromagnets. This study clarifies the mechanisms governing domain formation in antiferromagnetic devices by investigating the AF domains in patterned structures fabricated from CuMnAs and Mn$_2$Au thin films, which are key materials in antiferromagnetic spintronics research. The results reveal that patterned edges have a significant impact on the magnetic anisotropy and AF domain structure over long ranges, which can be modeled through the consideration of short-range edge anisotropy and long-range magnetoelastic interactions. The non-trivial interaction of magnetostriction, substrate clamping, and edge anisotropy leads to specific equilibrium AF domain configurations in devices. This study explores the use of antiferromagnetic domain engineering through patterning to enhance device performance in both CuMnAs and Mn$_2$Au materials, which are the only known materials clearly associated with Néel spin orbit torques. By comparing two materials with the same magnetocrystalline symmetry but different elastic and magnetic anisotropy constants, the study disentangles the magnetic and elastic interactions which result in specific antiferromagnetic domain formation. These principles are applicable to all antiferromagnetic films grown on non-magnetic substrates as required for applications.