| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Singh, Manjeet
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Topics
Publications (7/7 displayed)
- 2023Self-healing nanocomposites <i>via</i> N-doped GO promoted “click chemistry”citations
- 2022Hot Carrier Effects on Real and Imaginary Parts of Brillouin Susceptibilities of Magnetoactive Doped III-V Semiconductors (Applied to N-type Doped InSb)
- 2022Piezoelectric Contributions to Parametric Amplification of Acoustical Phonons in Magnetized n-InSb Crystal
- 2020Performance Evaluation of design and operational parameters of Conventional Combine Harvester for Basmati Rice (Oryza Sativa)
- 2016Efficiency enhancement in dye sensitized solar cells through step wise cosensitization of TiO2 electrode with N719 and metal free dye
- 2007SIMPLIFIED MODELING OF STEADY-STATE AND TRANSIENT BRILLOUIN GAIN IN MAGNETOACTIVE NON-CENTROSYMMETRIC SEMICONDUCTORScitations
- 2006INFLUENCE OF PIEZOELECTRICITY AND MAGNETIC FIELD ON STIMULATED BRILLOUIN SCATTERING IN III–V SEMICONDUCTORScitations
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article
Hot Carrier Effects on Real and Imaginary Parts of Brillouin Susceptibilities of Magnetoactive Doped III-V Semiconductors (Applied to N-type Doped InSb)
Abstract
<jats:p>An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility ( ) of magnetoactive doped III-V semiconductors. Coupled mode approach is used to obtain expressions for . Numerical calculations are made for n-InSb crystal −CO2 laser system. Efforts are made to obtain enhanced values of and change of their sign under appropriate selection of external magnetic field (B0) and doping concentration (n0). The hot carrier effects of intense laser radiation modifies the momentum transfer collision frequency of carriers and consequently the nonlinearity of the medium, which in turn (i) further enhances , (ii) shifts the enhanced towards smaller values of B0, and (iii) widens the range of B0 at which change of sign of occurs. The change of sign of enhanced of magnetoactive doped III-V semiconductors, validates the possibility of chosen Brillouin medium as a potential candidate material for the fabrication of stimulated Brillouin scattering dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters.
 HIGHLIGHTS
 
 Hot carrier effects of intense laser radiation
 
 enhances real and imaginary parts of Brillouin susceptibility,
 shifts the enhanced real and imaginary parts of Brillouin susceptibility towards smaller values of magnetostatic field,
 widens the range of magnetostatic field at which change of sign of real and imaginary parts of Brillouin susceptibility occurs
 
 
 Analysis offer three achievable resonance conditions at which significant enhancement as well as change of sign of real and imaginary parts of Brillouin susceptibility are obtained
 Analysis establishes the technological potentiality of III-V semiconductors as hosts for fabrication of SBS based widely tunable and efficient optoelectronic devices
 
 GRAPHICAL ABSTRACT
 </jats:p>