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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sayede, Adlane
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2023Photoelectrochemical properties of copper pyrovanadate (Cu 2 V 2 O 7 ) thin films synthesized by pulsed laser depositioncitations
- 2023Crystal structure, magnetism, electronic structure and effect of electron doping in ThCrAsN: An ab-initio study
- 2020Investigating structure, magneto-electronic, and thermoelectric properties of the new d(0) quaternary Heusler compounds RbCaCZ (Z = P, As, Sb) from first principle calculations
- 2020Physical Properties of RhCrZ (Z= Si, Ge, P, As) Half-Heusler Compounds: A First-Principles Study
- 2020Ferromagnetism, half-metallicity and spin-polarised electronic structures characterisation insights in Ca 1− x Ti x Ocitations
- 2019Theoretical Investigation of Mg-based alloys for hydrogen storage
- 2019Investigation of the Substituting Effect of Chromium on the Electronic Structures and the Half-Metallic Ferromagnetic Properties of BaOcitations
- 2019Microstructural study of nickel thin films by pulsed laser deposition
- 2018Microstructure and oxidation resistance of relaxed epitaxial nickel thin films grown on (100)- and (110)-SrTiO 3 substrates by pulsed laser depositioncitations
- 2018First‐Principle Predictions of Electronic Properties and Half‐Metallic Ferromagnetism in Vanadium‐Doped Rock‐Salt SrOcitations
- 2017The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impuritiescitations
- 2016The effect of pressure and alloying on half‐metallicity of quaternary Heusler compounds CoMnYZ (Z = Al, Ga, and In)citations
- 2014ELASTIC, ELECTRONIC AND THERMODYNAMIC PROPERTIES OF Rh3X(X = Zr, Nb and Ta) INTERMETALLIC COMPOUNDScitations
- 2012First‐principle studies of the structural, electronic and optical properties of the intermetallics semiconducting compounds RuAl <inf>2</inf>, RuGa <inf>2</inf> and OsAl <inf>2</inf>citations
- 2011Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in La 2 Ti 2 O 7 Thin Films Grown on (110)‐Oriented Doped Nb:SrTiO 3 Substratescitations
- 2011Theoretical investigation of the hydrogenation induced atomic rearrangements in palladium rich intermetallic compounds MPd3 (M = Mg, In, Tl)citations
Places of action
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article
Physical Properties of RhCrZ (Z= Si, Ge, P, As) Half-Heusler Compounds: A First-Principles Study
Abstract
We use the first-principles-based density functional theory with full potential linearized augmented plane wave method in order to investigate the structural, elastic, electronic, magnetic and thermoelectric properties of RhCrZ (Z= Si, Ge, P, As) Half-Heusler compounds. The preferred configurations of the RhCrZ alloys are all type a. The structural parameters are in good agreement with the available theoretical results. The Young’s and shear modulus, Poisson’s ratio, sound velocities, Debye temperature and melting temperature have been calculated. Furthermore, the elastic constants Cij and the related elastic moduli confirm their stability in the cubic phase and demonstrate their ductile nature. The compounds RhCrSi, RhCrGe, RhCrP and RhCrAs are found to be half-metallic ferrimagnets (HMFs) with a half-metallic gap EHM of 0.37, 0.35, 0.25 and 0.02 eV, respectively. The half-metallicity of RhCrZ (Z= Si, Ge, P, As) compounds can be kept in a quite large hydrostatic strain and tetragonal distortion. The Curie temperatures of RhCrSi, RhCrGe, RhCrP and RhCrAs compounds are estimated to be 952, 1261, 82 and 297 K, respectively, in the mean field approximation (MFA). Thermoelectric properties of the RhCrZ (Z= Si, Ge, P, As) materials are additionally computed over an extensive variety of temperatures and it is discovered that RhCrAs demonstrates higher figure of merit than RhCrSi, RhCrGe and RhCrP. The properties of half-metallicity and higher Seebeck coefficient make this material a promising candidate for thermoelectric and spintronic device applications