• Patel, Hitarth
• Sharma, Rajesh Kumar
• Joshi, Deepak

Abstract

Cu2BaSn(S,Se)4 (CBTSSe) is a prominent member of multinary chalcogenide family which provides thepotential of a decreased amount of antisite defects and properties that can be tuned for photovoltaic (PV) applications.It possesses similar electrical properties as Cu2ZnSn(S,Se)4 (CZTSSe) due to the analogous connectivity of the Cu andSn chalcogenide tetrahedra. By varying the S:Se ratio, the CBTSSe offers a wide range tunable bandgap (1.5-2.0 eV),making it an attractive choice for single and multijunction PV systems. CBTSSe has attracted the attention of manyresearchers due to its earth-abundant material and environmental friendliness. In this paper, we have performednumerical simulation to investigate the suitability of different buffer layers and the effect of metal contacts onperformance of solar cell. Optimizing the interface defect between the absorber and buffer has significantly enhancedthe Power Conversion Efficiency (PCE) from 6.17% to 13%. We also noted that the deficit in open circuit voltage(Voc) is majorly due to the poor interface between the absorber and buffer, which needs to be optimized to improvecell performance. We have demonstrated the effect of replacing the buffer layer with other potential materials, whichincreased PCE to 15.3%. Additionally, study on the effect of metal contact work function and incorporation of Anti-reflection coating (ARC) is performed. Finally, the performance parameters of the optimized PV device are: Jsc: 24.35mA/cm2, Voc: 1.08 V, FF: 88.16%, PCE: 23.32%.

Topics

• impedance spectroscopy
• simulation
• defect
• power conversion efficiency