693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kleider, Jean-Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Surface photovoltage study of perovskite materials and structures for solar cell applications
- 2024Three Terminal Organic-Silicon Tandem Models
- 2023Elucidating Interfacial Limitations Induced by Tin Oxide Electron Selective Layer Grown by Atomic Layer Deposition in N−I−P Perovskite-Based Solar Cellscitations
- 2023The modulated photoluminescence technique versus temperature: opportunities for better determination of trap parameters
- 2022Characterization of semiconductors from photoconductivity techniques: uniform and polychromatic illumination
- 2022Surface photovoltage study of metal halide perovskites deposited directly on crystalline silicon
- 2022Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configurationcitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cellscitations
- 2021Space charge capacitance study of GaP/Si multilayer structures grown by plasma depositioncitations
- 2021Surface photovoltage characterisation of metal halide perovskite on c-SI using kelvin probe force microscopy and metal-insulator-semiconductor configuration
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Influence of PE-ALD of GaP on the Silicon Wafers Qualitycitations
- 2015Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cellscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2013n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysiscitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanowire solar cells using hydrogenated amorphous silicon: a modeling studycitations
- 2009An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy
- 2007Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitridecitations
Places of action
| Organizations | Location | People |
|---|
document
Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
Abstract
The monolithic integration on silicon of GaAs, and more generally of III-V semiconductors, is a very attractive and promising route for the production of high efficiencies multijunctions devices in the manner of those developed for space applications on germanium, but at a much lower cost suitable for terrestrial PV applications. The purpose of this paper is to present the building blocks we have developed for defect-free growth of GaAs on silicon for tandem solar cell applications. This will be addressed from the technological point of view as well as from design, modelling and characterization perspectives. Preliminary work has allowed the identification of critical technological bottlenecks, following which solution routes have been developed as will be presented and discussed. The resulting design for a GaAs/Si tandem solar cell will then be described..