| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renard, Charles
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Epitaxy of hexagonal Ge-2H : lessons from in situ TEM observations
- 2023Epitaxy of hexagonal Ge-2H : growth regimes and related I3 defects
- 2022Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2Hcitations
- 2019In situ electrical characterization of YxTiy getter thin films during thermal activationcitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2017GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgalliumcitations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>citations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO 2citations
- 2008Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor depositioncitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
Places of action
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document
Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
Abstract
The monolithic integration on silicon of GaAs, and more generally of III-V semiconductors, is a very attractive and promising route for the production of high efficiencies multijunctions devices in the manner of those developed for space applications on germanium, but at a much lower cost suitable for terrestrial PV applications. The purpose of this paper is to present the building blocks we have developed for defect-free growth of GaAs on silicon for tandem solar cell applications. This will be addressed from the technological point of view as well as from design, modelling and characterization perspectives. Preliminary work has allowed the identification of critical technological bottlenecks, following which solution routes have been developed as will be presented and discussed. The resulting design for a GaAs/Si tandem solar cell will then be described..