| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Falko, Vladimir I.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistancecitations
- 2024Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance.
- 2024Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectricscitations
- 2021Excited Rydberg States in MoSe2/WSe2 Heterostructurescitations
- 2019Data for Indirect to direct gap crossover in two-dimensional InSe revealed by angle resolved photoemission spectroscopy
- 2019Formation and healing of defects in atomically thin GaSe and InSecitations
- 2019Indirect to direct gap crossover in two-dimensional InSe revealed by angle-resolved photoemission spectroscopycitations
- 2018Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructurescitations
- 2018Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictionscitations
- 2017Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphenecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSecitations
- 2016The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystalscitations
- 2016Auger recombination of dark excitons in WS2 and WSe2 monolayerscitations
- 2015k · p theory for two-dimensional transition metal dichalcogenide semiconductorscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2014Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxycitations
- 2014Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculationscitations
- 2008Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wellscitations
- 2008Nuclear spin bi-stability in semiconductor quantum dots
- 2007Bistability of optically induced nuclear spin orientation in quantum dotscitations
- 2007The low energy electronic band structure of bilayer graphene.citations
- 2004A tunnel junction between a ferromagnet and a normal metal:Magnon-assisted contribution to thermopower and conductancecitations
- 2004A tunnel junction between a ferromagnet and a normal metal: magnon-assisted contribution to thermopower and conductancecitations
- 2003Magnon-assisted transport and thermopower in ferromagnet-normal-metal tunnel junctionscitations
- 2003Andreev reflection and subgap transport due to electron-magnon interactions in ferromagnet-superconductor junctions.citations
Places of action
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booksection
Nuclear spin bi-stability in semiconductor quantum dots
Abstract
The confinement of electrons on the nano-scale and the control of their spin is leading to both new physics and to novel devices with functionality at the quantum level. In III-V semiconductors where manipulation of a single electron spin has been possible in nano-structures, new challenges and opportunities arise due to the hyperfine interaction with the spin reservoir of lattice nuclei. In this work we show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of the tens of thousands of atoms constituting an InGaAs island can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 Tesla can be generated by varying the intensity of light. We show that such a nuclear spin "switch" can be controlled by both external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of spin transfer from electrons to the nuclei of the dot. A comprehensive theory describing the nuclear bi-stability phenomenon in optically pumped dots is presented.