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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rodionova, V.
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Topics
Publications (10/10 displayed)
- 2024Enhancing wettability and adhesive properties of PVDF-based substrates through non-thermal helium plasma surface modificationcitations
- 2022Iron oxide nanoparticles synthesized by a glycine-modified coprecipitation method: Structure and magnetic propertiescitations
- 2021Complex optimization of arc melting synthesis for bulk Cr2AlC MAX-phasecitations
- 2021Boosting magnetoelectric effect in polymer-based nanocompositescitations
- 2021Synthesis of phase-pure highly-doped MAX-phase (Cr1-xMnx)2AlCcitations
- 2021Effect of citric acid on the morpho-structural and magnetic properties of ultrasmall iron oxide nanoparticlescitations
- 2019Magnetic interactions versus magnetic anisotropy in spinel ferrite nanoparticlescitations
- 2018Martensitic transformation behavior of Ni2.44Mn0.48Ga1.08 thin glass-coated microwirecitations
- 2016Bimagnetic microwires, magnetic properties, and high-frequency behaviorcitations
- 2012Ni-Mn-In Heusler Alloy Thin Films Grown by Pulsed Laser Depositioncitations
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article
Ni-Mn-In Heusler Alloy Thin Films Grown by Pulsed Laser Deposition
Abstract
<jats:p>We report on the results of the magnetic and structure properties investigation of Heusler alloy films. Ni-Mn-In thin films were formed by pulsed laser deposition. Stoichiometry was varied and controlled by co-deposition technique. The different deposition conditions and influence of the annealing temperature on the film composition were investigated using Auger electron spectroscopy and Rutherford backscattering spectrometry. The optimal annealing temperature was found to be 620 K. The set of the films deposited on the oxidized Si (100) substrate at room temperature and annealed at 620 K was investigated using X-ray diffractometry at room temperature and Vibrating sample magnetometery at low temperatures. The crystal structure was found to be a mixture of austenitic and martensitic phases at room temperature. Decreasing of Curie temperature from 270 K to 250 K with the decreasing of In concentration from 20 at % to 15 at % was observed.</jats:p>