| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuzmin, Mikhail
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2022Production of Portland cement using fluorine gypsum – hydrofluoric acid wastecitations
- 2022Determination of the Thermodynamic Stability of Intermetallic Compounds in Technical Aluminumcitations
- 2020Effect of pressure on the elemental composition and magnetic properties of lithium-doped ZnO thin films
- 2020High-Temperature Ferromagnetism of Zn<sub>1-</sub><i><sub>x</sub></i>Mn<i><sub>x</sub></i>O<i><sub>y </sub></i>Thin Films Synthesized by Pulsed Laser Depositioncitations
- 2018Preparation of Aluminum–Carbon Nanotubes Composite Material by Hot Pressingcitations
- 2017Investigation of the structural anisotropy in a self-assembling glycinate layer on Cu(100) by scanning tunneling microscopy and density functional theory calculationscitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2011Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates:A catalyst for removal of amorphous surface oxidescitations
Places of action
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article
High-Temperature Ferromagnetism of Zn<sub>1-</sub><i><sub>x</sub></i>Mn<i><sub>x</sub></i>O<i><sub>y </sub></i>Thin Films Synthesized by Pulsed Laser Deposition
Abstract
<jats:p>The paper discusses the findings of the study of the structural and magnetic properties of Zn<jats:sub>1-</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Mn<jats:italic><jats:sub>x</jats:sub></jats:italic>O<jats:italic><jats:sub>y</jats:sub></jats:italic> thin films (<jats:italic>x </jats:italic>= 0-0.08), synthesized by pulsed laser deposition under different conditions. It has been discovered that during the doping, thin films remain single-phased and retain wurtzite structure (ZnO <jats:italic><jats:sub>wurz</jats:sub></jats:italic>), oriented along the direction (001). It has been determined that thin films obtained under the same synthesis conditions have similar crystallite sizes, which is confirmed by the substitution of Mn<jats:sup>2+</jats:sup> ions with Zn<jats:sup>2+</jats:sup> ions in the Zn O semiconductor matrix. It has been found that annealing of samples in the oxygen atmosphere increases the surface roughness from 1-3 nm to ~ 10 nm; the higher the concentration of manganese in Zn<jats:sub>1-</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Mn<jats:italic><jats:sub>x</jats:sub></jats:italic>O<jats:italic><jats:sub>y</jats:sub></jats:italic> films is, the greater the value of<jats:italic> R</jats:italic><jats:italic><jats:sub>a</jats:sub></jats:italic><jats:italic>. </jats:italic>It has been demonstrated that, at room temperature, all Zn<jats:sub>1-</jats:sub><jats:italic><jats:sub>x</jats:sub></jats:italic>Mn<jats:italic><jats:sub>x</jats:sub></jats:italic>O<jats:italic><jats:sub>y</jats:sub></jats:italic> thin films (<jats:italic>x</jats:italic> = 0-0.08) exhibit ferromagnetic behavior, which is more pronounced upon the increase in concentration of oxygen vacancies and manganese in the samples. It is assumed that two mechanisms explaining high-temperature ferromagnetism coexist in the films: the first one is determined by ferromagnetic exchange between Mn<jats:sup>2+ </jats:sup>cations by means of oxygen vacancies, the second one deals with super-exchange interaction between oxygen vacancies.</jats:p>