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Baqiya, Malik Anjelh
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Publications (4/4 displayed)
- 2023Carbonization at Varying Temperatures of PVA-Derived Nanofibers Fabricated by Electrospinning
- 2022Effects of surface polarity on the structure and magnetic properties of epitaxial h-YMnO3 thin films grown on MgO substratescitations
- 2019Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glasscitations
- 2017Spinel‐Structured Nanoparticles for Magnetic and Mechanical Applicationscitations
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article
Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glass
Abstract
<jats:p>A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm<jats:sup>2</jats:sup> and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.</jats:p>