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Michaud, Jean-Francois
Université de Tours
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article
Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
Abstract
<jats:p>Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.</jats:p>