| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Azarov, Alexander
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2023High versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatings ; ENEngelskEnglishHigh versus low energy ion irradiation impact on functional properties of PLD-grown alumina coatingscitations
- 2023Tuning electrical properties in Ga2O3 polymorphs induced with ion beamscitations
- 2023A peridynamic elasto-plastic damage model for ion-irradiated materials ; ENEngelskEnglishA peridynamic elasto-plastic damage model for ion-irradiated materialscitations
- 2023Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics ; ENEngelskEnglishReactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamicscitations
- 2023Tuning electrical properties in Ga2O3 polymorphs induced with ion beams ; ENEngelskEnglishTuning electrical properties in Ga2O3 polymorphs induced with ion beamscitations
- 2023The Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloys ; ENEngelskEnglishThe Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloyscitations
- 2023Tuning defect-related optical bands by channeling implants in semiconductors ; ENEngelskEnglishTuning defect-related optical bands by channeling implants in semiconductors
- 2022Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis ; ENEngelskEnglishCombined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysiscitations
- 2022Radiation tolerance of GaN: The balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms ; ENEngelskEnglishRadiation tolerance of GaN: The balance between radiation-stimulated defect annealing and defect stabilization by implanted atomscitations
- 2022Disorder-Induced Ordering in Gallium Oxide Polymorphs ; ENEngelskEnglishDisorder-Induced Ordering in Gallium Oxide Polymorphscitations
- 2022Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs ; ENEngelskEnglishComparative study of radiation tolerance of GaN and Ga2O3 polymorphscitations
- 2021Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modificationcitations
- 2021Effects of La2O3 Addition into CaO-SiO2 Slag: Structural Evolution and Impurity Separation from Si-Sn Alloycitations
- 2020Phosphorus separation from metallurgical-grade silicon by magnesium alloying and acid leachingcitations
- 2019Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Filmscitations
- 2019Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMScitations
- 2019Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigationscitations
- 2018Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy studycitations
- 2011Cd diffusion and thermal stability of CdZnO/ZnO heterostructurescitations
- 2011Understanding phase separation in ZnCdO by a combination of structural and optical analysiscitations
Places of action
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article
Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS
Abstract
<jats:p>Ion implantation is a crucial step in the process of SiC device fabrication. Precise and predictable doping distributions are necessary for reduced cell pitches and integrated circuit development. However, straggling due to ion channeling affects this goal. Even though vertical channeling has been investigated successfully, lateral straggling remains unclear. Therefore, two-dimensional SIMS concentration distributions are used to investigate lateral straggling of Al and P implanted in 4H-SiC. Results, for both Al and P, show that there is a significant influence of the crystal orientation showing that some channels lead to a few micrometers more lateral straggling than others. High implantation doses increase the amount of amorphization, which leads to more dechanneling and, thus, less straggling. Even though elevated implantation temperatures increase lattice vibrations and thus act in favor of dechanneling, the implantation distributions show significant lateral straggling as amorphization is suppressed.</jats:p>