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| Naji, M. |
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Pichler, Peter
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Publications (6/6 displayed)
- 2022Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealingcitations
- 2022Process Simulationcitations
- 2021Tracing the Boron Diffusion into a Textured Silicon Solar Cell by Combining Boron Diffusion Simulation with Experimental and Simulated Scanning Transmission Electron Beam Induced Current
- 2020Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections ; Fortschrittliche Simulationen zur Laserausheilung: Explosive Kristallisation und Phononentransportkorrekturencitations
- 2019Channeling in 4H-SiC from an Application Point of Viewcitations
- 2015Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements ; Thermomechanische Simulation des Drahtbondens mit elasto-plastischen Parametern, die über Messungen per Nanoindentation und Rasterkraftmikroskopie ermittelt wurdencitations
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article
Channeling in 4H-SiC from an Application Point of View
Abstract
<jats:p>During ion implantation into monocrystalline semiconductors, some of the implanted atoms will be deflected to crystal directions along which they may penetrate deeply into the crystal. We investigate such channeling effects for Al and N implantation into 4H-SiC by Monte Carlo simulations. The focus of the work is on the effects of channeling on doping profiles, the relevance for the net doping of typical power electronic devices, and the influence of scattering oxides.</jats:p>