• Magna, Antonino La
• Camarda, Massimo
• Pellegrino, Giovanna
• Via, Francesco La
• Fiorenza, Patrick
• Vecchio, Carmelo
• Crippa, Danilo
• Anzalone, Ruggero
• Piluso, Nicolò
• Privitera, Stefania
• Litrico, Grazia
• Pecora, Antonino
• Alberti, Alessandra
• Mauceri, Marco

Abstract

<jats:p>In this paper we investigate the role of the growth rate (varied by changing the Si/H<jats:sub>2</jats:sub>ratio and using TCS to avoid Si droplet formation) on the surface roughness (<jats:italic>R<jats:sub>q</jats:sub></jats:italic>), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-stacking faults, ESF). We find that optimized processes with higher growth rates allow to improve the films in<jats:italic>all</jats:italic>the considered aspects. This result, together with the reduced cost of growth processes, indicates that high growth rates should always be used to improve the overall quality of 4H-SiC homoepitaxial growths. Furthermore we analyze the connection between surface morphology and density of traps (<jats:italic>D<jats:sub>it</jats:sub></jats:italic>) at the SiO<jats:sub>2</jats:sub>/SiC interface in fabricated MOS devices finding consistent indications that higher surface roughness (step-bunched surfaces) can improve the quality of the interface by reducing the<jats:italic>D<jats:sub>it</jats:sub></jats:italic>value.</jats:p>

Topics

• density
• morphology
• surface
• inclusion
• carbide
• Silicon
• stacking fault