| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pellegrino, Giovanna
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2019Study on the Physico-Chemical Properties of the Si Nanowires Surfacecitations
- 2018Freestanding photocatalytic materials based on 3D graphene and polyporphyrinscitations
- 2017Novel synthesis of ZnO/PMMA nanocomposites for photocatalytic applicationscitations
- 2016Controlled Al3+ Incorporation in the ZnO Lattice at 188 degrees C by Soft Reactive Co-Sputtering for Transparent Conductive Oxidescitations
- 2015Implications of TiO2 surface functionalization on polycrystalline mixed halide perovskite films and photovoltaic devicescitations
- 2015Low temperature sputtered TiO<sub>2</sub> nano sheaths on electrospun PES fibers as high porosity photoactive materialcitations
- 2015Implications of TiO2surface functionalization on polycrystalline mixed halide perovskite films and photovoltaic devicescitations
- 2014Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applicationscitations
Places of action
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article
Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications
Abstract
<jats:p>In this paper we investigate the role of the growth rate (varied by changing the Si/H<jats:sub>2</jats:sub>ratio and using TCS to avoid Si droplet formation) on the surface roughness (<jats:italic>R<jats:sub>q</jats:sub></jats:italic>), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-stacking faults, ESF). We find that optimized processes with higher growth rates allow to improve the films in<jats:italic>all</jats:italic>the considered aspects. This result, together with the reduced cost of growth processes, indicates that high growth rates should always be used to improve the overall quality of 4H-SiC homoepitaxial growths. Furthermore we analyze the connection between surface morphology and density of traps (<jats:italic>D<jats:sub>it</jats:sub></jats:italic>) at the SiO<jats:sub>2</jats:sub>/SiC interface in fabricated MOS devices finding consistent indications that higher surface roughness (step-bunched surfaces) can improve the quality of the interface by reducing the<jats:italic>D<jats:sub>it</jats:sub></jats:italic>value.</jats:p>